Role of strain in SiO $_{2}$ /Si interfacial oxidation, 3; 3C-SiC growth caused by oxidation-induced carbon condensation

Hozumi, Hideaki*; Ogawa, Shuichi*; Yoshigoe, Akitaka ; Ishizuka, Shinji*; Harries, J.; Teraoka, Yuden; Takakuwa, Yuji*

An SiGe alloy layer is used for fabrication of strained Si-MOSFET devices. The use of C atoms instead of Ge is also presented. Oxidation processes in the gate insulator formation on the Si $_{1-x}$ C $_{x}$ alloy layer is completely different comparing to an Si clean surface. In this study, behavior of C atoms in the oxidation of Si $_{1-x}$ C $_{x}$ alloy layer has been investigated by real-time XPS. Concentration of C atoms in the SiO $_{2}$ /Si interface took place due to induced strain by oxidation. And 3C-SiC growth occurred when C density increased over a critical value of 0.2.

Language	:	Japanese
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Meeting title	:	2010年(平成22年)春季第57回応用物理学関係連合講演会
Held date	:	2010/03
Location (city)	:	平塚
Location (country)	:	日本
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Keywords	:	no keyword
Research Facility	:	SPring-8(大型放射光施設)
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Article of JAEA R&D Review	:
Cooperating Institute	:	東北大学

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Registration No. : BB20093401
JAEA Abstracts No. :
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Role of strain in SiO/Si interfacial oxidation, 3; 3C-SiC growth caused by oxidation-induced carbon condensation

Role of strain in SiO $_{2}$ /Si interfacial oxidation, 3; 3C-SiC growth caused by oxidation-induced carbon condensation