LEED and XPS observations of graphene-on-Si process

Takahashi, Ryota*; Miyamoto, Yu*; Handa, Hiroyuki*; Saito, Eiji*; Imaizumi, Kei*; Fukidome, Hirokazu*; Suemitsu, Maki*; Teraoka, Yuden; Yoshigoe, Akitaka 

In this study, a graphene-on-silicon process was observed by LEED and XPS to make clear mechanisms. LEED patterns of SiC(11) and Si(RT3RT3)R30 were observed on the 3C-SiC(111) surface formed on the Si(111) surface. After the thermal annealing process at 1523 K for 30 min, a LEED pattern of graphene(11) was also observed. The graphene(11) pattern was tilted to the SiC(11) pattern by 30 deg as expected. The graphene formation process of 3C-SiC(111) on the Si(111) is the same as that of a 6H-SiC(0001) substrate. Comparing a C1s photoemission peak before and after the annealling process, a Cis peak corresponding to an sp hybrid orbital appeared and a peak due to SiC bulk decreased. These facts reveal that a surface state transformation from SiC(11)(bulk state) to graphene(11)(graphene state) takes place even in the graphene-on-silicon process on Si(111) surface as well as the graphene formation process on the 6H-SiC(0001) substrate.