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Report No.
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Effect of surface metal oxide on the desorption of hydrogenation from hydrogenated diamond-like carbon films

Tagawa, Masahito*; Yokota, Kumiko*; Furuyama, Yuichi*; Tode, Mayumi; Yoshigoe, Akitaka ; Teraoka, Yuden

In order to make clear an effect of surface oxide layers for hydrogen desorption processes of hydrogen storage materials, ultra-thin metal oxide layers were formed on diamond-like-carbon (DLC) surfaces containing hydrogen and metals by irradiation of atomic oxygen beams. The thickness of SiO$$_{2}$$ layer formed by the atomic oxygen beam irradiation was estimated to be about 4.5-6.5 nm on the basis of Si$$^{0}$$/Si$$^{4+}$$ photoemission peak area ratio. This value is larger than the diffusion depth of oxygen atoms in an Si crystal at a room temperature. Thermal desorption gas analyses revealed that a hydrogen desorption temperature did not change by the atomic oxygen beam irradiation. However, a hydrogen desorption temperature decreased in the atomic oxygen beam irradiation to a DLC containing Ti. The variation of hydrogen desorption temperature depends on a kind of metal oxide layer.

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