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Report No.
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Experimental determination of effective attenuation length for SiO$$_2$$ thin film with synchrotron radiation phottoemission spectroscopy

Inoue, Keisuke; Teraoka, Yuden

The effective attenuation length (EAL) is a necessary parameter to estimate the thickness of SiO$$_2$$ overlayer by X-ray photoemission spectroscopy (XPS). Inelastic mean free path (IMFP) is often used instead of EAL because EAL is scarcely known. EAL values were determined experimentally in the photon energy region from 480 eV to 800 eV using synchrotron radiation photoemission spectroscopy. Although EALs estimated are different from calculated IMFPs, EALs, estimated without suboxides, are mostly close to theoretically-calculated IMFPs.

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