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Thermal degradation analysis of deuterium-ion-implanted V$$_{25}$$Cr$$_{40}$$Ti$$_{35}$$ using synchrotron radiation photoelectron spectroscopy

Tode, Mayumi; Harries, J.; Teraoka, Yuden; Yoshigoe, Akitaka 

In order to study the thermal degradation process of the hydrogen storage materials surface layer and the thermal desorption of hydrogen property, we have used high-resolution synchrotron radiation X-ray photoelectron spectroscopy. The experiments were performed at the JAEA soft X-ray beamline BL23SU at SPring-8, using the "SUREAC2000" surface reaction analysis apparatus. Spectra were recorded for two samples (V$$_{25}$$Cr$$_{40}$$Ti$$_{35}$$) covered with native oxide layers, one of which was implanted with deuterium ions. For the un-implanted sample, the oxide layer changes dramatically between 373 K and 473 K, for the deuterium-implanted sample, the change occurs between 473 K and 573 K. The implantation of deuterium leads to a stabilization (of approximately 100 K) of the surface oxide layer.

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