Electronic properties of femtosecond laser induced modified spots on single crystal silicon carbide

Tomita, Takuro*; Iwami, Masahiro*; Yamamoto, Minoru*; Deki, Manato*; Matsuo, Shigeki*; Hashimoto, Shuichi*; Nakagawa, Yoshinori*; Kitada, Takahiro*; Isu, Toshiro*; Saito, Shingo*; Sakai, Kiyomi*; Onoda, Shinobu; Oshima, Takeshi

no abstracts in English

Language	:	English
Journal	:	Materials Science Forum
Volume	:	645-648
Number	:
Pages	:	p.239 - 242
Publication Year/Month	:	2010/04
Meeting title	:	13th International Conference on Silicon Carbide and Related Materials 2009 (ICSCRM 2009)
Held date	:	2009/10
Location (city)	:	Nrnberg
Location (country)	:	Germany
Patent information	:
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Paper URL	:
DOI for research data	:
Keywords	:	no keyword
Research Facility	:	TIARA(イオン照射研究施設)
Press Release	:
Article of JAEA R&D Review	:
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Registration No. : BB20093832
JAEA Abstracts No. : 38000721
Paper Submission No. : 7338

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