Concentration of carbon in the etching of Si(001) surface by oxygen molecules

Hozumi, Hideaki*; Ogawa, Shuichi*; Yoshigoe, Akitaka ; Ishizuka, Shinji*; Harries, J.; Teraoka, Yuden; Takakuwa, Yuji*

The oxidation kinetics on the Si $_{1-x}$ C $_{x}$ alloy layer was investigated using the real-time XPS measurement to reveal the oxidation mechanism of Si alloy layer. Experiments were performed using the surface reaction analysis apparatus placed at the BL23SU of SPring-8. The Si $_{1-x}$ C $_{x}$ alloy layer was formed with ethylene (C $_{2}$ H $_{4}$ ) exposure to Si(001) surface and then that surface was oxidized at 963K. An oxidation rate of the Si $_{1-x}$ C $_{x}$ alloy layer is faster than that of a clean Si surface. The C 1s photoelectron intensity decreased by 10% in spite of the etching of 45 Si layers due to SiO desorption. Based on these results, it is suggested that all C atoms diffuse into Si substrate due to oxidation-induced strain.

Language	:	Japanese
Journal	:
Volume	:
Number	:
Pages	:
Publication Year/Month	:
Meeting title	:	平成21年度日本表面科学会東北・北海道支部講演会
Held date	:	2010/03
Location (city)	:	仙台
Location (country)	:	日本
Patent information	:
PDF	:
Paper URL	:
DOI for research data	:
Keywords	:	no keyword
Research Facility	:	SPring-8(大型放射光施設)
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	東北大学

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:
Altmetrics	:

Registration No. : BB20100203
JAEA Abstracts No. :
Paper Submission No. :

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.