Photo- and dark conductivity variations of solar cell quality a-Si:H thin films irradiated with protons

Sato, Shinichiro; Sai, Hitoshi*; Oshima, Takeshi; Imaizumi, Mitsuru*; Shimazaki, Kazunori*; Kondo, Michio*

We investigated conductivity variations of hydrogenated amorphous silicon thin films during and following 10 MeV proton irradiations at the fluences of 2.0 $times10^{13}$ or 4.0 $times10^{14}$ /cm $^{2}$ . In addition, we compared behaviors of the light-induced degradations before and after 10 MeV proton irradiations. The results showed that the conductivity during the irradiation initially increased and after that decreased. These conductivity behaviors were in good agreement with the photoconductivity variations. The conductivity value never fell below the value before the irradiation even in the case of 4.0 $times10^{14}$ /cm $^{2}$ irradiation.

Language	:	English
Journal	:	Proceedings of 35th IEEE Photovoltaic Specialists Conference (PVSC-35) (CD-ROM)
Volume	:
Number	:
Pages	:	p.002620 - 002624
Publication Year/Month	:	2010/06
Meeting title	:	35th IEEE Photovoltaic Specialists Conference (PVSC-35)
Held date	:	2010/06
Location (city)	:	Honolulu
Location (country)	:	U.S.A.
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1109/PVSC.2010.5617173
DOI for research data	:
Keywords	:	no keyword
Research Facility	:	TIARA(イオン照射研究施設)
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	宇宙航空研究開発機構

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Registration No. : BB20100305
JAEA Abstracts No. : 39000094
Paper Submission No. : 8335

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