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Fabrication of diluted magnetic semiconductor crystals by ion-implantation technique

Yabuuchi, Atsushi; Maekawa, Masaki; Kawasuso, Atsuo; Entani, Shiro; Matsumoto, Yoshihiro; Sakai, Seiji; Yamamoto, Shunya

Ion implantation technique is expected to be useful in fabrication of diluted magnetic semiconductors (DMS) that require high concentration magnetic atom doping without a secondary phase formation. However, ion implantation surely introduces irradiation-induced vacancies into crystals. Recent calculation studies have suggested a presence of vacancies affect the magnetic properties in DMS. In this study, magnetic ions were implanted into compound semiconductor crystals by using ion implantation. N-type ZnO(0001) crystals were implanted with 380 keV maximum energy Cr$$^+$$ ions to a dose of 1$$times$$10$$^{16}$$ ions/cm$$^2$$. After ion implantation, isochronal annealing in steps of 30 min/100 $$^{circ}$$C was performed. From the measurement results, irradiation-induced vacancies were annealed out at 900 $$^{circ}$$C. From XRD measurements after annealing at 1100 $$^{circ}$$C, no secondary phase peaks were observed. However, from SQUID measurement, a clear magnetic hysteresis was not observed.

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