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Analysis of bombardment effect of 10-to-100-keV C$$_{60}$$ ions on a Si surface

10-100keV領域C$$_{60}$$イオンのSi表面に対する衝撃効果の解析

鳴海 一雅; 楢本 洋*; 高橋 康之; 山田 圭介; 千葉 敦也; 齋藤 勇一; 前田 佳均

Narumi, Kazumasa; Naramoto, Hiroshi*; Takahashi, Yasuyuki; Yamada, Keisuke; Chiba, Atsuya; Saito, Yuichi; Maeda, Yoshihito

In the energy range from 10 to 540 keV, we have determined Si sputtering yield as a function of energy of C$$_{60}$$ ions, and the number density of Si atoms displaced from the lattice site and carbon concentration in the surface layer as a function of C$$_{60}$$-ion fluence. Small pieces of Si(100) wafer were irradiated with 10-, 50-keV C$$_{60}$$$$^{+}$$ and 400-keV C$$_{60}$$$$^{2+}$$ ions. The fluence of the C$$_{60}$$ ion was 10$$^{11}$$ to 10$$^{15}$$ C$$_{60}$$/cm$$^{2}$$. The number of Si atoms displaced from their lattice sites per cm$$^{2}$$ was determined from the peak area of a surface peak of backscattering yields of 2-MeV He$$^{+}$$ ions for $$<$$100$$>$$-axial alignment of a Si crystal. Carbon concentration in the surface layer was determined with the nuclear reactions $$^{12}$$C (d, p$$_{0}$$)$$^{13}$$C using 1.2-MeV D$$^{+}$$. Another set of Si samples were irradiated with 200-keV Ar$$^{+}$$ ions at the fluence of 5$$times$$10$$^{15}$$ /cm$$^{2}$$ prior to the C$$_{60}$$-ion irradiation in order to prepare an amorphous layer at the surface; then, they were irradiated with 10$$sim$$120-keV C$$_{60}$$$$^{+}$$ and 200$$sim$$540-keV C$$_{60}$$$$^{2+}$$ ions. Si sputtering yields were determined from the thickness change of the amorphous layer measured with Rutherford-backscattering spectrometry using 2-MeV He$$^{+}$$ ions. Effect of C$$_{60}$$-ion bombardment on a Si surface will be discussed comprehensively.

発表言語

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English

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号

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発表会議名

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24th International Conference on Atomic Collisions in Solids (ICACS-24)

開催年月

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2010/07

開催都市

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Krak$'o$w

開催国

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Poland

キーワード

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no keyword

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PDF

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研究データの公開先DOI

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本成果にかかわる研究データのリンクです。

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TIARA(イオン照射研究施設)

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論文解説記事
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- Accesses

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