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Refreshable decrease in peak height of ion beam induced transient current from silicon carbide metal-oxide-semiconductor capacitors

Oshima, Takeshi; Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Deki, Manato; Nozaki, Shinji*

Metal-Oxide-Semiconductor (MOS) capacitors were fabricated on n-type 4H- and 6H-SiC epitaxial layers, and transient currents induced in SiC MOS capacitors by ion incidence were investigated. Transient Ion Beam Induced Current (TIBIC) measurements were performed using 15 MeV oxygen ions. As a result, the TIBIC peak height decreased with increasing number of incident ions. For example, the TIBIC signal peak for a 4H-SiC MOS capacitor at a reverse bias of 15 V was 0.18 mA at the beginning. The peak decreased to be 0.10 mA after 1800 ion irradiation. After that, the forward bias of 1 V was applied to the MOS capacitor and the TIBIC measurements were carried out under the same conditions. As a result, the peak height was recovered to be 0.18 mA. In general, the response of charge de-trapping by deep levels in wide bandgap semiconductors is very slow and they act as fixed charge. Since dense electron-hole pairs are generated by ion incident and holes move to the SiO$$_{2}$$/SiC interface by the electric field (applied reverse bias). Therefore, the decrease in TIBIC signal peak can be interpreted in terms of the recombination of negatively charged acceptor type deep levels with ion induced holes.

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