Estimation of digital single event transient pulse-widths in logic cells from high-energy heavy-ion-induced transient current in a single MOSFET

Makino, Takahiro; Onoda, Shinobu; Hirao, Toshio; Oshima, Takeshi; Kobayashi, Daisuke*; Ikeda, Hirokazu*; Hirose, Kazuyuki*

Digital Single Event Transient (DSET) pulse-widths in an inverter cell fabricated with the 0.2 mm FD-SOI process were estimated from high-energy heavy-ion-induced transient current in a single n-type MOSFET fabricated with the 0.2 mm FD-SOI process. We verified that the estimation method is applicable to the DSET pulse-widths estimation in the case of high-energy heavy-ion irradiation.