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Oxygen ion induced charge in SiC MOS capacitors irradiated with $$gamma$$-rays

Oshima, Takeshi; Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Nozaki, Shinji*; Kojima, Kazutoshi*

Charge induced in the 6H-Silicon Carbide (SiC) n Metal-Oxide-Semiconductor (MOS) capacitors by 15 MeV oxygen ion microbeams was evaluated using Transient Ion Beam Induced Current (TIBIC) before and after $$gamma$$-ray irradiations. With increasing number of incident ions, the peak height of TIBIC signals decreases and the fall time increases. The decrease in TIBIC peak finally saturated. The peak height of the TIBIC signal can be refreshed to its original shape by applying a positive bias of + 1V to the oxide electrode. This result can be explained in terms of the existence of deep hole traps. Small decrease in both TIBIC signal peak and collected charge was observed due to $$gamma$$-ray irradiation.

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