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Magnetic and dielectric study of Bi$$_{2}$$CuO$$_{4}$$

Yoshii, Kenji  ; Fukuda, Tatsuo  ; Akahama, Hiroshi*; Kano, Jun*; Kambe, Takashi*; Ikeda, Naoshi*

We have investigated the magnetic and dielectric properties of Bi$$_{2}$$CuO$$_{4}$$, which has the same chemical formula as that of the parent materials of high-Tc superconductors, R$$_{2}$$CuO$$_{4}$$ (R: rare earths). Magnetic measurements showed that this oxide exhibits an antiferromagnetic transition at around 40 K, owing to the localized Cu$$^{2+}$$ spins. Dielectric constants were found to be about 100 at room temperature, which are smaller than those of R$$_{2}$$CuO$$_{4}$$ (about 10000 at room temperature). The imaginary part of dielectric response showed the activation energy of about 0.1 eV, suggesting that the dielectric response is brought about by a transfer of Cu-3d electrons.

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Category:Physics, Applied

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