Raman and FT-IR spectroscopy of electron irradiated LiNbO

Miyazaki, Hisashi*; Morimoto, Jun*; Toda, Koji*; Onoda, Shinobu; Oshima, Takeshi

LiNO has several advantages for opto-electronic and acousto-optic applications including waveguides, modulators, second harmonic generators and surface acoustic wave (SAW) devices. In this study, we characterized the defects in electron irradiated LiNbO single crystal substrates using Raman. The Raman peak of symmetrical O-Nb-O bending mode drastically decreased with increasing electron irradiation. It is thought that the electron irradiation gives the biggest influence on the Nb-O bond.

Language	:	English
Journal	:	Proceedings of 9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9)
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Pages	:	p.226 - 229
Publication Year/Month	:	2010/10
Meeting title	:	9th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications (RASEDA-9)
Held date	:	2010/10
Location (city)	:	Takasaki
Location (country)	:	Japan
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Keywords	:	no keyword
Research Facility	:	電子加速器
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Article of JAEA R&D Review	:
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Registration No. : BB20102284
JAEA Abstracts No. : 39000113
Paper Submission No. : 8354

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