Study of structure fluctuation during molecular beam epitaxial growth using X-ray

Takahashi, Masamitsu

Recently, as the partially coherent X-rays from the third-generation synchrotron light source become available, photon correlation spectroscopy in the X-ray region has been developed. This technique is suitable for the investigation of the surface dynamics during molecular-beam epitaxy (MBE). In this work, we have explored the possibility of X-ray photon correlation spectroscopy during molecular-beam epitaxial growth of III-V group semiconductors. The dynamics of the exchange of atoms at the solid-vapor interface is important not only to understand the elemental processes of crystal growth but also to enhance the accuracy of the numerical simulations of MBE.