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In situ observation of Fe growth on GaAs(001) and InAs(001) by X-ray diffraction

Fujikawa, Seiji; Takahashi, Masamitsu

In this work, we evaluated Fe films on GaAs(001) and InAs(001) by in-situ X-ray diffraction measurements with increasing Fe thickness. While the Fe film on InAs(001) was strained even at 30 ML, Fe on GaAs(001) was already relaxed at 4 ML with Fe$$_{3}$$Ga$$_{2-x}$$As$$_{x}$$2$$bar{2}$$$$bar{2}$$ diffraction. While the increase of Fe$$_{3}$$Ga$$_{2-x}$$As$$_{x}$$2$$bar{2}$$$$bar{2}$$ intensity shows down at 12 ML, The intensity of Fe 020 increasingly rises. These results suggest that interfacial Fe$$_{3}$$Ga$$_{2-x}$$As$$_{x}$$2$$bar{2}$$2 on GaAs(001) facilitate the strain relief of Fe/GaAs(001).

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