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Preparation of porous fluoropolymer membranes by ion beam irradiation; Pretreatment effect on track etching

Yamaki, Tetsuya; Koshikawa, Hiroshi; Sawada, Shinichi; Hakoda, Teruyuki; Hasegawa, Shin; Asano, Masaharu; Maekawa, Yasunari; Voss, K.-O.*; Trautmann, C.*; Neumann, R.*

We investigated how pretreatment affected the subsequent ion-track etching in poly(vinylidene fluoride) (PVDF) films by scanning electron microscope (SEM) observations and conductometric analysis. The films were irradiated with a 450 MeV $$^{129}$$Xe or 2.2 GeV $$^{197}$$Au ion beam and then chemically etched in a 9 M KOH aqueous solution at 80 $$^{circ}$$C after their exposure to an atmosphere of pure O$$_{2}$$, a KMnO$$_{4}$$ aqueous solution, or O$$_{3}$$. The pretreatment with O$$_{3}$$ dramatically shortened the breakthrough time of etched pores, T$$_{B}$$, while, in contrast, the pretreatment in the other atmospheres caused little change in T$$_{B}$$. Interestingly, the O$$_{3}$$ exposure did not affect etching of the non-irradiated part, i.e., bulk etching, thereby achieving very high etching sensitivity.

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