Ion beam irradiation effects on resist materials

Gowa, Tomoko*; Takahashi, Tomohiro*; Oka, Toshitaka ; Murakami, Takeshi*; Oshima, Akihiro*; Tagawa, Seiichi*; Washio, Masakazu*

6 MeV/u ion beams (Si $^{14+}$ , Ar $^{18+}$ , etc.) and 30 kV Ga $^{+}$ focused ion beam (FIB) were irradiated to a chemical amplified deep-UV resist and electron beam resist. The resist sensitivities were correlated with the energy deposition of ion beams, we obtained clear patterns of the resists. In contrast, crosslinking reaction of resist polymer was induced by the FIB irradiation, positive-negative inversion took place.

Language	:	English
Journal	:	Journal of Photopolymer Science and Technology
Volume	:	23
Number	:	3
Pages	:	p.399 - 404
Publication Year/Month	:	2010/08
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Paper URL	:	https://doi.org/10.2494/photopolymer.23.399
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Keywords	:	no keyword
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Registration No. : AA20100495
JAEA Abstracts No. : 39000611
Paper Submission No. : 8826

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