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Correlation between SiO$$_{2}$$/SiC interface structure and conduction band offset

Kirino, Takashi*; Chanthaphan, A.*; Ikeguchi, Daisuke*; Yoshigoe, Akitaka ; Teraoka, Yuden; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

In order to investigate correlation between a conduction band offset and the interface characteristics of SiO$$_{2}$$/SiC structure, synchrotron radiation XPS have been conducted for the SiO$$_{2}$$/SiC structure formed by sputtering and thermal oxidation. In the SiO$$_{2}$$/SiC interface formed by sputtering, higher oxidation number components decreased and the total amount of suboxides was small comparing with thermal oxidation. Furthermore, an SiO$$_{2}$$ photoemission peak of the sputtering sample was shifted to higher binding energy side by 0.24 eV, and a conduction band offset was smaller comparing with the thermal oxide sample. The SiO$$_{2}$$ band gap was evaluated from an O1s energy loss spectrum, and the valence band offset was also obtained from a valence band photoemission spectrum. The conduction band offset for the sputtering sample was smaller by 0.35 eV comparing with the thermal oxide sample.



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