Correlation between SiO/SiC interface structure and conduction band offset

Kirino, Takashi*; Chanthaphan, A.*; Ikeguchi, Daisuke*; Yoshigoe, Akitaka ; Teraoka, Yuden; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; Hosoi, Takuji*; Shimura, Takayoshi*; Watanabe, Heiji*

In order to investigate correlation between a conduction band offset and the interface characteristics of SiO/SiC structure, synchrotron radiation XPS have been conducted for the SiO/SiC structure formed by sputtering and thermal oxidation. In the SiO/SiC interface formed by sputtering, higher oxidation number components decreased and the total amount of suboxides was small comparing with thermal oxidation. Furthermore, an SiO photoemission peak of the sputtering sample was shifted to higher binding energy side by 0.24 eV, and a conduction band offset was smaller comparing with the thermal oxide sample. The SiO band gap was evaluated from an O1s energy loss spectrum, and the valence band offset was also obtained from a valence band photoemission spectrum. The conduction band offset for the sputtering sample was smaller by 0.35 eV comparing with the thermal oxide sample.