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Report No.
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The Study of oxidation on TiAl surface with photoemission spectroscopy in conjunction with synchrotron radiation

Hashinokuchi, Michihiro*; Sumimoto, Yuichi*; Tode, Mayumi; Harries, J.; Okada, Michio*; Teraoka, Yuden; Kasai, Toshio*

The oxidation processes on a TiAl surface induced by a hyperthermal O$$_{2}$$ molecular beam (HOMB) with a translational energy of 2.2 eV was studied by X-ray photoemission spectroscopy in conjunction with synchrotron radiation. At a surface temperature of 300 K, the simultaneous growth of Al and Ti oxides accompanied with the segregation of Al$$_{2}$$O$$_{3}$$ near the surface was observed. The efficiency of oxidation for the HOMB incidence was smaller than that for O$$_{2}$$ backfilling (25 meV). Furthermore, the chemical compositions of oxide species (Al$$_{2}$$O$$_{3}$$, Ti$$_{2}$$O$$_{3}$$, TiO$$_{2}$$) on the TiAl surface were independent of the translational energy of incident O$$_{2}$$ molecule. The present results suggest that the oxidation on TiAl surface proceeds via precursor molecular states.

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