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Report No.

Change in current induced from silicon carbide metal-oxide-semiconductor capacitors by oxygen ions

Oshima, Takeshi; Iwamoto, Naoya; Onoda, Shinobu; Makino, Takahiro; Deki, Manato; Nozaki, Shinji*

In order to investigate radiation response of Silicon Carbide (SiC) Metal-Oxide-Semiconductor (MOS) devices, current induced from SiC MOS capacitors by oxygen (O) ion was investigated. MOS capacitors were fabricated on an n-type 6H-SiC epitaxial layer, and charge induced in the MOS capacitors by 15 MeV oxygen ion microbeams was measured using Transient Ion Beam Induced Current (TIBIC). As a result, the peak amplitude of TIBIC signals decreases and the fall time increases with increasing number of incident ions. The decrease in peak amplitude of the TIBIC signal eventually saturated after an incidence of 1000 ions. The TIBIC signal peak value can be refreshed to its original value by applying a positive bias of 1V to the oxide electrode. Charge collection, also, shows similar behavior to that of the TIBIC peak. These results can be interpreted in terms of charge trapping or de-trapping by deep hole traps near the interface of SiC and SiO$$_{2}$$.



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