Transient currents observed from drain contact of 6H-SiC MOSFETs induced by single heavy ion

Onoda, Shinobu; Iwamoto, Naoya; Makino, Takahiro; Kojima, Kazutoshi*; Nozaki, Shinji*; Oshima, Takeshi

no abstracts in English

Language	:	Japanese
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Meeting title	:	シリコンカーバイド(SiC)及び関連ワイドギャップ半導体研究会第19回講演会
Held date	:	2010/10
Location (city)	:	つくば
Location (country)	:	日本
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Keywords	:	no keyword
Research Facility	:	TIARA(イオン照射研究施設)
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Cooperating Institute	:	産業技術総合研究所; 電気通信大学

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Registration No. : BB20102390
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