Interface properties of metal/graphene heterostructures studied by micro-Raman spectroscopy

Entani, Shiro; Sakai, Seiji; Matsumoto, Yoshihiro; Naramoto, Hiroshi*; Hao, T.; Maeda, Yoshihito

Studies are conducted for the influence of the interface formation of graphene with various transition metals on its vibrational properties by using confocal micro-Raman spectroscopy. Comparative analysis for two different regions of single-layer graphene (SLG) and multilayer graphene (MLG) fabricated within an identical graphene sheet enables us to investigate the interactions at and the doping effect from the metal/graphene interface as a function of the layers number of graphene without the influence of the unintentional doping. Confirmed dependences of the peaks shifts of the Raman bands (D, G and 2D bands) on the graphene layers number and metal species (Co, Ni and Au) reveal that the interfacial interactions are dramatically different between single layer and multilayer graphenes. In the metal/MLG heterostructures, the Raman band shifts are reasonably attributed to carrier doping from metals. In the metal/SLG heterostructures, significant differences from the metal/MLG heterostructures were observed for the Raman parameters of the G and 2D bands. It is suggested that there exist strong interactions at the metal/SLG interfaces different from those at the metal/MLG interfaces.