Change in hole concentration in Al-doped 6H-SiC by electron irradiation and thermal annealing

Matsuura, Hideharu*; Yanagisawa, Hideki*; Nishino, Kozo*; Myojin, Yoshiko*; Nojiri, Takunori*; Matsuyama, Yukei*; Onoda, Shinobu; Oshima, Takeshi

no abstracts in English

Language	:	Japanese
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Meeting title	:	第5回高崎量子応用研究シンポジウム
Held date	:	2010/10
Location (city)	:	高崎
Location (country)	:	日本
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Keywords	:	no keyword
Research Facility	:	電子加速器
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Article of JAEA R&D Review	:
Cooperating Institute	:	大阪電通大学

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Registration No. : BB20102414
JAEA Abstracts No. :
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