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Effect of SiO$$_{2}$$/4H-SiC interface passivalon on energy band alignment between SiO$$_{2}$$ and 4H-SiC

Hosoi, Takuji*; Kirino, Takashi*; Chanthaphan, A.*; Ikeguchi, Daisuke*; Yoshigoe, Akitaka ; Teraoka, Yuden; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; Shimura, Takayoshi*; Watanabe, Heiji*

A balence band off-set of SiO$$_{2}$$/SiC interface, which affects the reliability of SiC-MOS devises, was evaluated by synchrotron radiation photoemission spectroscopy. An SiO$$_{2}$$ film formed by sputtering deposition showed smaller off-set than that of thermal oxide film. Interface defects, originate in carbon impurities, and balence band off-set of thermal SiO$$_{2}$$/SiC interface were decreased by annealing in the high temperature hydrogen gas.



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