Effect of SiO $_{2}$ /4H-SiC interface passivalon on energy band alignment between SiO $_{2}$ and 4H-SiC

Hosoi, Takuji*; Kirino, Takashi*; Chanthaphan, A.*; Ikeguchi, Daisuke*; Yoshigoe, Akitaka ; Teraoka, Yuden; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; Shimura, Takayoshi*; Watanabe, Heiji*

A balence band off-set of SiO $_{2}$ /SiC interface, which affects the reliability of SiC-MOS devises, was evaluated by synchrotron radiation photoemission spectroscopy. An SiO $_{2}$ film formed by sputtering deposition showed smaller off-set than that of thermal oxide film. Interface defects, originate in carbon impurities, and balence band off-set of thermal SiO $_{2}$ /SiC interface were decreased by annealing in the high temperature hydrogen gas.

Language	:	Japanese
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Meeting title	:	シリコンカーバイド(SiC)及び関連ワイドギャップ半導体研究会第19回講演会
Held date	:	2010/10
Location (city)	:	つくば
Location (country)	:	日本
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Keywords	:	no keyword
Research Facility	:	SPring-8(大型放射光施設)
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Article of JAEA R&D Review	:
Cooperating Institute	:	大阪大学

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Registration No. : BB20102510
JAEA Abstracts No. :
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Effect of SiO/4H-SiC interface passivalon on energy band alignment between SiO and 4H-SiC

Effect of SiO $_{2}$ /4H-SiC interface passivalon on energy band alignment between SiO $_{2}$ and 4H-SiC