Fabrication and evaluation of light-emitting SiO substrates implanted with Ge ions

Shinagawa, Teruyoshi*; Umenyi, A. V.*; Kikuchi, Shusuke*; Aiba, Mizuki*; Inada, Kazuki*; Miura, Kenta*; Hanaizumi, Osamu*; Yamamoto, Shunya; Kawaguchi, Kazuhiro; Yoshikawa, Masahito

Light emission between ultraviolet and blue from SiO substrates implanted with Ge ions in comparatively shallow depth (100 nm) has been reported. In this paper, we report the photoluminescence (PL) properties of SiO substrates implanted with Ge ions deeper than previous works (200 nm depth) in order to enlarge the spot size of the photonic crystals waveguides. Ge ions were implanted into an SiO substrate with 350 keV, and the implantation amount was 110 ions/cm. PL peaks around a wavelength of 400 nm were observed. Stronger PL peaks were measured after annealing (900 C), which confirmed an effect of improving the emission intensity by the annealing process. Though Ge ions were implanted more deeply than the earlier reported depth, similar results were confirmed. The expectation for a new light-emitting waveguide device that combines Ge-ion-implanted SiO substrates with photonic crystal characteristics has risen.