In situ synchrotron radiation photoemission study of Ge $_{3}$ N $_{4}$ /Ge structures formed by plasma nitridation

Hosoi, Takuji*; Kutsuki, Katsuhiro*; Okamoto, Gaku*; Yoshigoe, Akitaka ; Teraoka, Yuden; Shimura, Takayoshi*; Watanabe, Heiji*

Atomic structure and thermal stability of Ge $_{3}$ N $_{4}$ dielectric layers for advanced Ge-MIS devices were investigated. SR-PES analysis revealed that Ge $_{3}$ N $_{4}$ layers formed by high-density plasma nitridation are thermally stable up to 823 K, while surface oxides selectively decompose at around 773 K. Chemical shift originating from Ge-N bonds (Ge $^{4+}$ ) was also found to be 2.3 eV.

Language	:	English
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Meeting title	:	2011 International Workshop on Dielectric Thin Films for Future Electron Devices; Science and Technology (IWDTF-11)
Held date	:	2011/01
Location (city)	:	Tokyo
Location (country)	:	Japan
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Keywords	:	no keyword
Research Facility	:	SPring-8(大型放射光施設)
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Article of JAEA R&D Review	:
Cooperating Institute	:	大阪大学

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Registration No. : BB20103501
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In situ synchrotron radiation photoemission study of GeN/Ge structures formed by plasma nitridation

In situ synchrotron radiation photoemission study of Ge $_{3}$ N $_{4}$ /Ge structures formed by plasma nitridation