Radiation response of the electrical characteristics of GaAs solar cells with quantum dot layers

Oshima, Takeshi; Sato, Shinichiro; Imaizumi, Mitsuru*; Sugaya, Takeyoshi*; Niki, Shigeru*

The change in the electrical performance of PiN structure solar cells with self-organized InGaAs QD layers by 1MeV electron irradiation is studied. The samples were irradiated with electrons at 1MeV using the simultaneous techniques (an in-situ measurement technique) at JAEA. As a results, very small degradation of short circuit current (I) is observed for both 50QD and non QD solar cells up to 110/cm, and the significant degradation for both solar cells is observed above 110/cm. At 110/cm, the values for the 50QD and non QD solar cells become 90 and 95 %, respectively. For the radiation response of open circuit voltage (V), the value for 50 QD solar cells decreases with increasing fluence, and the value becomes 88 % by irradiation at 110/cm. The overall degradation behavior of V for the 50 QD solar cell is slightly smaller than that for the non QD solar cell. These results indicate that QD solar cells have high radiation resistance.