Development of silicon carbide devices with high radiation resistance

Oshima, Takeshi; Onoda, Shinobu; Tanaka, Yasunori*; Arai, Manabu*

no abstracts in English

Language	:	Japanese
Journal	:	Isotope News
Volume	:
Number	:	686
Pages	:	p.8 - 12
Publication Year/Month	:	2011/06
Meeting title	:
Held date	:
Location (city)	:
Location (country)	:
Patent information	:
PDF	:
Paper URL	:	http://ci.nii.ac.jp/naid/10028234298
DOI for research data	:
Keywords	:	no keyword
Research Facility	:	コバルト60照射施設
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	産業技術総合研究所

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
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Registration No. : AA20110095
JAEA Abstracts No. : 39001050
Paper Submission No. : 9313

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