Annealing behavior of the EB-centers and M-center in low-energy electron irradiated -type 4H-SiC

Beyer, F. C.*; Hemmingsson, C.*; Pedersen, H.*; Henry, A.*; Janzn, E.*; Isoya, Junichi*; Morishita, Norio*; Oshima, Takeshi

By low-energy electron (200 keV) irradiation into epitaxial n-type 4H-SiC with a dose of 510/cm, the bistable M-center is detected in the deep level transient spectroscopy (DLTS) spectrum. The annealing behavior of the M-center is investigated. During the annihilation process of M-center, the bistable EB-centers are detected in the low temperature range of the DLTS spectrum. The value of annealing energy of the M-center is similar to the generation energy of the EB-centers. This suggests that the M-center partially transforms to the EB-centers by annealing. The EB-centers completely disappeared after annealing temperatures higher than 700 C. Since the threshold energy for moving Si atom in SiC is higher than the applied irradiation energy of electrons, and the annihilation temperatures are relatively low, the M-center and the EB-centers are attributed to defects related to the C atom in SiC.