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Study on effects of energetic ion irradiation in Gd$$_{2}$$O$$_{3}$$-doped CeO$$_{2}$$ by means of synchrotron radiation X-ray spectroscopy

Tahara, Yuki*; Shimizu, Hirotaka*; Ishikawa, Norito   ; Okamoto, Yoshihiro  ; Hori, Fuminobu*; Matsui, Toshiyuki*; Iwase, Akihiro*

In this study, to simulate such an environment, Gd$$_{2}$$O$$_{3}$$-doped CeO$$_{2}$$ samples were irradiated with 200 MeV Xe$$^{14+}$$ ions at room temperature using an ion beam accelerator at JAEA-Tokai. As CeO$$_{2}$$ has the same fluorite structure as that of UO$$_{2}$$ and several properties of CeO$$_{2}$$ are similar to UO$$_{2}$$, in this study CeO$$_{2}$$ was used as a simulation material of UO$$_{2}$$. To study the effects of the ion irradiation on Gd$$_{2}$$O$$_{3}$$-doped CeO$$_{2}$$, extended X-ray absorption fine structure (EXAFS) and X-ray photoelectron spectroscopy (XPS) were used at the Photon Factory of High Energy Accelerator Research Organization (KEK) as well as conventional X-ray diffraction (XRD) measurement. The EXAFS and XRD spectra show that the effects of the ion irradiation are more pronounced for higher amount of Gd$$_{2}$$O$$_{3}$$ dopant.

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