Temporal donor generation in undoped hydrogenated amorphous silicon induced by swift proton bombardment

Sato, Shinichiro; Sai, Hitoshi*; Oshima, Takeshi; Imaizumi, Mitsuru*; Shimazaki, Kazunori*; Kondo, Michio*

Seebeck coefficient variations of undoped hydrogenated amorphous silicon (a-Si:H) semiconductors due to swift proton irradiation were investigated using an in-situ thermoelectric power measurement system. Undoped a-Si:H irradiated with 3.0 MeV protons at a fluence regime of 3.110 $^{11}$ - 5.010 $^{12}$ /cm showed a negative Seebeck coefficient although the Seebeck effect was not observed at fluences above 5.310 $^{13}$ /cm. These results suggest that donor like centers are generated by low fluence proton irradiation, whereas the donor centers are compensated by radiation-induced defects or themselves disappear after high fluence proton irradiation. These effects decay with time, giving the donor centers a temporal nature.

Language	:	English
Journal	:	Applied Physics Express
Volume	:	4
Number	:	6
Pages	:	p.061401_1 - 061401_3
Publication Year/Month	:	2011/06
Meeting title	:
Held date	:
Location (city)	:
Location (country)	:
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1143/APEX.4.061401
DOI for research data	:
Keywords	:	no keyword
Research Facility	:	TIARA(イオン照射研究施設)
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	宇宙航空研究開発機構

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:38.03 Category:Physics, Applied
Altmetrics	:

Registration No. : AA20110198
JAEA Abstracts No. : 39000960
Paper Submission No. : 9207

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.