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Effects of growth conditions on formation of vacancy-type defects in MBE-grown GaN

Yabuuchi, Atsushi; Maekawa, Masaki; Kawasuso, Atsuo; Hasegawa, Shigehiko*; Zhou, Y.-K.*; Asahi, Hajime*

In the MBE growth of dilute magnetic semiconductors, the low-temperature growth has been attempted to suppress the precipitation of secondary phases. A current problem is a control of vacancy-type defects. Thus in this study, effects of growth conditions on formation of vacancy-type defects in MBE-grown GaN were investigated by positron annihilation spectroscopy. GaN buffer layers with the thickness of 30 nm were grown on sapphire substrates at 700$$^{circ}$$C. Furthermore, GaN-cap (20 nm)/GaCrN (200 nm) layers were grown at different temperatures (540$$^{circ}$$C, 300$$^{circ}$$C and room temperature). For these samples, positron annihilation $$gamma$$-ray peak intensity measurements were performed. As a result, the $$gamma$$-ray peak intensity increased with decreasing the growth temperature. This result shows that the concentration or size of vacancy-type defects contained in the GaCrN layer increases with decreasing growth temperature.

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