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High-pressure electrical resistivity measurement on heavy fermion superconductor URu$$_2$$Si$$_2$$ using super clean crystal

URu$$_2$$Si$$_2$$の高純度単結晶試料を用いた高圧下電気抵抗測定

立岩 尚之   ; 松田 達磨; 芳賀 芳範   ; 山本 悦嗣  ; 大貫 惇睦

Tateiwa, Naoyuki; Matsuda, Tatsuma; Haga, Yoshinori; Yamamoto, Etsuji; Onuki, Yoshichika

URu$$_2$$Si$$_2$$の高圧下電気抵抗測定を高純度単結晶試料を用いて行った。圧力相図を再検討した。圧力を加えると、隠れた秩序相への相転移温度は増大し、超伝導転移温度は単調に減少してゆく。基底状態が隠れた秩序相である臨界圧力$$P_x$$未満では、電気抵抗の温度のべきは2より小さくなることが明らかにされた。これは通常のフェルミ流体理論と異なる結果であり、隠れた秩序相の特性であることが明らかにされた。

We have measured the electrical resistivity of URu$$_2$$Si$$_2$$ under high pressure using a high quality single crystal sample. The pressure phase diagram was re-investigated. With increasing pressure, the transition temperature $$T_0$$ from the paramagnetic to the "hidden order" states increases and the superconducting transition temperature $$T_{sc}$$ decreases simply. Below $$P_x$$, a power law exponent $$n$$ smaller than 2 is required to represent the data and the values of $$n$$ are generally about 1.5 $$pm$$ 0.1. Above $$P_x$$, $$n$$ increases with increasing pressure and the value is about 2.0 at 1.51 GPa. It is suggested that the derivation of the exponent $$n$$ from the Fermi liquid theory is intrinsic to the hidden order state.

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