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Change in the electrical performance of GaAs solar cells with InGaAs quantum dot layers by electron irradiation

Oshima, Takeshi; Sato, Shinichiro; Imaizumi, Mitsuru*; Nakamura, Tetsuya*; Sugaya, Takeyoshi*; Matsubara, Koji*; Niki, Shigeru*

GaAs solar cells which have a PiN structure with 50 self-organized In$$_{0.4}$$Ga$$_{0.6}$$As Quantum Dot (QD) layers were irradiated with 1 MeV electrons up to 1$$times$$10$$^{16}$$ /cm$$^{2}$$. After irradiation at 1$$times$$10$$^{16}$$/cm$$^{2}$$, the remaining factor of I$$_{rm SC}$$, V$$_{rm OC}$$ and P$$_{rm MAX}$$ for the InGaAs 50 QD solar cell becomes 80, 90 and 55% of the initial values, respectively. On the other hand, those values for non QD GaAs solar cells decrease to 95, 80 and 63% of the initial values, respectively. Since the i-layer for the 50 QD solar cells (1.1 $$mu$$m) is thicker than the non QD solar cells (660 nm), the larger degradation of I$$_{rm SC}$$ for the 50 QD solar cells than the non QD ones can be interpreted in terms that the carrier recombination in the i-layer for the 50 QD solar cells is larger than that for the non QD solar cells. For V$$_{rm OC}$$, the 50 QD solar cells showes better radiation resistance than the non QD solar cells. Furthermore, the annealing behavior of the electrical characteristics for the 50 QD and the non QD solar cells was investigated at RT under AM 0 immediately after the irradiation. As a result, the recovery of the electrical characteristics for both solar cells was observed, and the GaAs solar cells shows relatively larger recovery compared to the 50 QD solar cells. Although the mechanism of this recovery has not yet been clarified, the origin of this recovery is thought not to come from the existence of QDs because the GaAs solar cell without QD layers also shows the recovery.

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Category:Energy & Fuels

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