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Report No.

Reduction of electron concentration in Lightly N-Doped n-Type 4H-SiC epilayers by 200 keV electron irradiation

Matsuura, Hideharu*; Yanagisawa, Hideki*; Nishino, Kozo*; Nojiri, Takunori*; Myojin, Yoshiko*; Matsuyama, Yukei*; Onoda, Shinobu; Oshima, Takeshi

The mechanism of the reduction in the electron concentration in lightly Nitrogen (N) doped n-type 4H Silicon Carbide (SiC) epilayers by 200 keV electron irradiation is investigated. The densities and energy levels of donors and the compensating density are determined by applying a graphical peak analysis method to the temperature dependence of the electron concentration in the epilayer before and after irradiations. As a result, we found that the density of N donors at hexagonal C-sublattice sites was reduced much more than the density of N donors at cubic C-sublattice sites.



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