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Report No.

Radiation degradation of the electrical performance of InGaAs quantum dot solar cells and its recovery at room temperature

Oshima, Takeshi; Sato, Shinichiro; Imaizumi, Mitsuru*; Nakamura, Tetsuya*; Sugaya, Takeyoshi*; Matsubara, Koji*; Niki, Shigeru*

The radiation degradation of the electrical characteristics of GaAs solar cells which have PiN structures with 50 self-organized In$$_{0.4}$$Ga$$_{0.6}$$As QD layers and the recovery of their degraded characteristics at room temperature (RT) were investigated, using the in-situ measurement method. The value of open circuit voltage (V$$_{OC}$$) for the InGaAs 50 QD solar cell remains 90% of the initial value after 1MeV electron irradiation at 1$$times$$10$$^{16}$$/cm$$^{2}$$, and this value is larger than that for the GaAs solar cell with non QD layers. On the other hand, the values of short circuit current (I$$_{SC}$$) and maximum power (P$$_{MAX}$$) for the 50 QD solar cells decrease to approximately 80 and 60% of the initial value after the electron irradiation, respectively. The degradation of I$$_{SC}$$ and P$$_{MAX}$$ for the GaAs solar cells with non QD layers is smaller than those for the 50 QD solar cells. After the irradiation, the annealing behavior of the electrical characteristics for the solar cells was investigated under AM 0 at room temperature. As a result, the recovery of P$$_{MAX}$$ for both solar cells is observed, and the non QD GaAs solar cell shows relatively large recovery compared to the 50 QD solar cell.



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