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Cluster effect on projected range of 30 keV C$$_{60}$$$$^{+}$$ in silicon

Morita, Yosuke*; Nakajima, Kaoru*; Suzuki, Motofumi*; Narumi, Kazumasa; Saito, Yuichi; Vandervorst, W.*; Kimura, Kenji*

Pre-amorphized silicon wafers are implanted with 30 keV C$$_{60}$$$$^{+}$$ and 0.5 keV C$$^{+}$$ ions at room temperature with fluences about 2$$times$$10$$^{15}$$ atoms/cm$$^{2}$$. The depth profiles of implanted carbon are measured using high-resolution Rutherford backscattering spectroscopy. The observed average depth of C for the C$$_{60}$$$$^{+}$$ implantation is 6.1 nm while that for the C$$^{+}$$ implantation is 4.0 nm, showing a large cluster effect on the projected range.

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Category:Instruments & Instrumentation

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