Synchrotron radiation photoelectron spectroscopy study of thermally grown oxides on 4H-SiC(0001) Si-face and (000-1) C-face substrates

Watanabe, Heiji*; Hosoi, Takuji*; Kirino, Takashi*; Uenishi, Yusuke*; Chanthaphan, A.*; Yoshigoe, Akitaka ; Teraoka, Yuden; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; Shimura, Takayoshi*

We investigated the interface between oxide and 4H-SiC(0001) Si-face or (000-1) C-face by synchrotron radiation photoelectron spectroscopy. The Si 2p spectra were fitted with bulk SiC and SiO together with intermediate oxides (Si, Si, Si). The total amount of intermediate states was sufficiently small compared with that of the remaining oxides. This implies that the transition layer in the oxide is as thin as a few atomic layers. Moreover, the chemical composition in the bulk region was found to be almost identical to that of the initial SiC surface. These results indicate formation of a near-perfect SiO/SiC interface.