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Synchrotron radiation photoelectron spectroscopy study of thermally grown oxides on 4H-SiC(0001) Si-face and (000-1) C-face substrates

Watanabe, Heiji*; Hosoi, Takuji*; Kirino, Takashi*; Uenishi, Yusuke*; Chanthaphan, A.*; Yoshigoe, Akitaka ; Teraoka, Yuden; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; Shimura, Takayoshi*

We investigated the interface between oxide and 4H-SiC(0001) Si-face or (000-1) C-face by synchrotron radiation photoelectron spectroscopy. The Si 2p$$_{3/2}$$ spectra were fitted with bulk SiC and SiO$$_{2}$$ together with intermediate oxides (Si$$^{1+}$$, Si$$^{2+}$$, Si$$^{3+}$$). The total amount of intermediate states was sufficiently small compared with that of the remaining oxides. This implies that the transition layer in the oxide is as thin as a few atomic layers. Moreover, the chemical composition in the bulk region was found to be almost identical to that of the initial SiC surface. These results indicate formation of a near-perfect SiO$$_{2}$$/SiC interface.



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