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Nonlinear effect on damage in Si bombarded with 10-to-100-keV C$$_{60}$$ ions

10-100 keV領域C$$_{60}$$イオンを照射したSi中の損傷に対する非線形効果

鳴海 一雅; 楢本 洋*; 山田 圭介; 千葉 敦也; 齋藤 勇一; 高橋 康之*; 前田 佳均

Narumi, Kazumasa; Naramoto, Hiroshi*; Yamada, Keisuke; Chiba, Atsuya; Saito, Yuichi; Takahashi, Yasuyuki*; Maeda, Yoshihito

We have investigated nonlinear effect on displacement of lattice atoms in Si induced by bombardment with 10-540-keV C$$_{60}$$ ions. Pieces of Si(100) wafer treated with an RCA method were irradiated with 10-540-keV C$$_{60}$$ ions at room temperature. The areal density of displaced lattice atoms was determined from the area of a surface peak of backscattering yields of 2-MeV He$$^{+}$$ ions. The number of displaced Si atoms by single-C$$_{60}$$-ion bombardment, $${it N}$$$$_{D60}$$, has been derived from the fluence dependence of the areal density of displaced Si atoms. Comparing with that by monatomic-C-ion bombardment calculated with SRIM2008, $${it N}$$$$_{D1}$$, large nonlinear effect on the displacement of Si atoms has been found. The nonlinear effect is the maximum around 100 keV, where the number ratio of displaced Si atoms per C atom, $${it N}$$$$_{D60}$$/(60$$times$$$${it N}$$$$_{D1}$$) is more than 50.

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English

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号

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ページ数

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発行年月

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発表会議名

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第21回日本MRS学術シンポジウム

開催年月

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2011/12

開催都市

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横浜

開催国

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日本

キーワード

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no keyword

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研究データの公開先DOI

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使用施設

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TIARA(イオン照射研究施設)

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論文解説記事
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