Surface-sensitive chemical analysis of organic insulating thin films using negative secondary ions induced by medium energy C impacts

中エネルギーC照射による2次負イオンを利用した有機絶縁薄膜の表面敏感化学解析

平田 浩一*; 齋藤 勇一; 千葉 敦也; 山田 圭介; 鳴海 一雅

Hirata, Koichi*; Saito, Yuichi; Chiba, Atsuya; Yamada, Keisuke; Narumi, Kazumasa

We report on the surface-sensitive chemical analysis of organic insulating thin films using negative secondary ions (N-SIs) induced by C impacts in the medium energy range from several tens to several hundreds keV. Incident C energy dependence of emission yields of characteristic N-SIs for poly(methyl methacrylate) and charging effects on the N-SI mass spectra were investigated using time-of-flight SI mass spectrometry. Our results show that medium energy C impacts stably provides considerably high characteristic N-SI yields without charge-compensation, and demonstrate that time-of-flight SI mass spectrometry with medium energy C impacts is advantageous for highly-sensitive chemical analysis of organic insulators.