High-speed three-dimentional reciprocal-space mapping during MBE growth of InGaAs

Hu, W.; Suzuki, Hidetoshi*; Sasaki, Takuo*; Kozu, Miwa*; Takahashi, Masamitsu

This paper describes the development of a high-speed three-dimensional reciprocal space mapping method, designed for the real-time monitoring the strain relaxation process during the growth of heterostructure semiconductors. This rapid mapping technique was first tested to map the 022 asymmetric diffraction of a MBE-grown InGaAs/GaAs(001) thin film to demonstrate its feasibility, and then applied to real-time monitoring the strain relaxation process during the growth of a two layer InGaAs thin film heterostructures on GaAs(001) substrate, for which the time resolution is 10s. The results reveal that a rapid relaxation induced due to a growth of only 2 ML InGaAs and the first InGaAs thin film layer are fully relaxed due to the growth of the second layer.