Controls over structural and electronic properties of epitaxial graphene on silicon using surface termination of 3C-SiC(111)/Si

3C-SiC(111)/Siの表面終端を用いたシリコン上エピタキシャルグラフェンの構造制御と電気的特性

吹留 博一*; 阿部 峻佑*; 高橋 良太*; 今泉 京*; 猪俣 州哉*; 半田 浩之*; 齋藤 英司*; 遠田 義晴*; 吉越 章隆 ; 寺岡 有殿; 小嗣 真人*; 大河内 拓雄*; 木下 豊彦*; 伊藤 俊*; 末光 眞希*

Fukidome, Hirokazu*; Abe, Shunsuke*; Takahashi, Ryota*; Imaizumi, Kei*; Inomata, Shuya*; Handa, Hiroyuki*; Saito, Eiji*; Enta, Yoshiharu*; Yoshigoe, Akitaka; Teraoka, Yuden; Kotsugi, Masato*; Okochi, Takuo*; Kinoshita, Toyohiko*; Ito, Shun*; Suemitsu, Maki*

Epitaxial graphene on Si (GOS) using a heteroepitaxy of 3C-SiC/Si has attracted recent attention owing to its capability to fuse graphene with Si-based electronics. We demonstrate that the stacking, interface structure, and hence, electronic properties of GOS can be controlled by tuning the surface termination of 3C-SiC(111)/Si, with a proper choice of Si substrate and SiC growth conditions. On the Si-terminated 3C-SiC(111)/Si(111) surface, GOS is Bernal-stacked with a band splitting, while on the C-terminated 3C-SiC(111)/Si(110) surface, GOS is turbostratically stacked without a band splitting. This work enables us to precisely control the electronic properties of GOS for forthcoming devices.