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Report No.

Fabrication and evaluation of light-emitting SiO$$_{2}$$ substrate co-implanted with Si and C ions

Kikuchi, Shusuke*; Umenyi, A. V.*; Inada, Kazuki*; Kawashima, Akihiro*; Noguchi, Katsuya*; Sasaki, Tomoyuki*; Miura, Kenta*; Hanaizumi, Osamu*; Yamamoto, Shunya; Kawaguchi, Kazuhiro; Yoshikawa, Masahito

Light emission around a wavelength ($$lambda$$) of 500 nm from SiO$$_{2}$$ substrates implanted with Si and C ions and annealed at 1100$$^{circ}$$C has been reported. In this report, we investigated photoluminescence (PL) properties of SiO$$_{2}$$ substrates implanted with Si and C ions and annealed at the lower temperature of 700$$^{circ}$$C. PL peaks by Si-ion implantation were observed around $$lambda$$ = 650 nm, and PL peaks by C-ion implantation were observed around $$lambda$$ = 450 nm from SiO$$_{2}$$ substrates annealed at 700$$^{circ}$$C. The PL peak wavelength became shorter by increasing the ratio of C to Si ions. Consequently, it was confirmed that it is possible to control the emission wavelength by the ratio of C to Si ions. Our samples showed typical light-emission though the annealing temperature was lower than the temperature reported by other groups.



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