Study on Au cluster ion irradiation effects for Fz-Si single crystal by using slow positron beam

低速ポジトロンビームを用いたFz-Si単結晶に対するAuクラスターイオン照射効果の研究

堀 史説*; 河裾 厚男; 齋藤 勇一; 岩瀬 彰宏*

Hori, Fuminobu*; Kawasuso, Atsuo; Saito, Yuichi; Iwase, Akihiro*

Doppler broadening S-parameter measurements have been performed to study Au cluster ion irradiation effects on Fz-Si single crystals by using slow positron beam apparatus. As a result, the depth profile of Doppler broadening S-parameter clearly shows that vacancy type defects are introduced in both irradiation cases, but different types of defects, such as gold-vacancy and vacancy-impurity complexes, are produced in Fz-Si by Au and Au cluster ion irradiation.