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Report No.

Characterization and improvement of SiC-MOS interface properties for power device application

Hosoi, Takuji*; Kirino, Takashi*; Chanthaphan, A.*; Ikeguchi, Daisuke*; Yoshigoe, Akitaka ; Teraoka, Yuden; Mitani, Shuhei*; Nakano, Yuki*; Nakamura, Takashi*; Shimura, Takayoshi*; Watanabe, Heiji*

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