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Epitaxial transformation of hcp-fcc Ti sublattices during nitriding processes of evaporated-Ti thin films due to nitrogen-implantation

Chen, Y.*; Feng, X.*; Kasukabe, Yoshitaka*; Yamamoto, Shunya; Yoshikawa, Masahito; Fujino, Yutaka*

Epitaxial transformation processes of titanium films due to Nitrogen-implantation have been clarified through in-situ observations by using transmission electron microscope(TEM)and electron energy loss spectroscope, along with molecular orbital calculations. The N$$_{2}$$$$^{+}$$ ions with 62 keV are implanted into as-deposited Ti films which consist of hcp-Ti and TiH$$_{x}$$ with preferred orientations, in the 400 kV analytic high resolution TEM combined with ion accelerators at JAEA Takasaki. Thus, titanium nitride (TiN$$_{y}$$) films with preferred orientations are epitaxially formed by the inheritance of partial atomic arrangement of hcp-Ti or TiH$$_{x}$$ in as-deposited Ti films and by the occupation of octahedral sites by N atoms, which elucidates that epitaxial transformation of hcp-fcc Ti sublattices occurs.

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Category:Chemistry, Physical

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