Epitaxial transformation of hcp-fcc Ti sublattices during nitriding processes of evaporated-Ti thin films due to nitrogen-implantation

Chen, Y.*; Feng, X.*; Kasukabe, Yoshitaka*; Yamamoto, Shunya; Yoshikawa, Masahito; Fujino, Yutaka*

Epitaxial transformation processes of titanium films due to Nitrogen-implantation have been clarified through in-situ observations by using transmission electron microscope(TEM)and electron energy loss spectroscope, along with molecular orbital calculations. The N ions with 62 keV are implanted into as-deposited Ti films which consist of hcp-Ti and TiH with preferred orientations, in the 400 kV analytic high resolution TEM combined with ion accelerators at JAEA Takasaki. Thus, titanium nitride (TiN) films with preferred orientations are epitaxially formed by the inheritance of partial atomic arrangement of hcp-Ti or TiH in as-deposited Ti films and by the occupation of octahedral sites by N atoms, which elucidates that epitaxial transformation of hcp-fcc Ti sublattices occurs.