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Formation of atomically flat $$beta$$-FeSi$$_{2}$$/Si(100) interface using ion irradiated substrate

Sasase, Masato*; Yamamoto, Hiroyuki; Kurata, Hiroki*

Thin uniform $$beta$$-FeSi$$_{2}$$ films were fabricated on ion irradiated Si(100) substrates to achieve an atomically flat interface. Ion irradiation produces a surface with more defects than chemical etching, however, it is expected that the presence of defects can promote the formation of compound films such as $$beta$$-FeSi$$_{2}$$ that require interdiffusion and reaction processes. However, excess defects can also result in random nucleation, poor crystallinity and a rough interface. Cross-sectional transmission electron microscopy was used to determine the optimum conditions for ion irradiation of the substrate to obtain a clear $$beta$$-FeSi$$_{2}$$/Si interface.

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Category:Materials Science, Multidisciplinary

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