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Report No.

Initial products in the oxidation of Si(111)-7$$times$$7 surface using O$$_{2}$$ at 300 K and those formation processes observed by real-time synchrotron radiation X-ray photoelectron spectroscopy

Yoshigoe, Akitaka ; Teraoka, Yuden

To understand reaction mechanism of the oxidation at an Si(111)-7$$times$$7 surface using O$$_{2}$$ at 300 K, the determination of initial products is essentially important. Oxygen bonding configurations and silicon oxidation states were observed using real-time X-ray photoelectron spectroscopy for O1s together with Si 2p. It is found that $$ins$$ structure initially forms, where one oxygen atom inserts in the backbond of Si adatom. It is ascertained that the chemisorbed molecular oxygen, so-called $$paul$$ oxygen, is the adsorbate on top of the $$ins$$ structure. It is also clarified that $$ad$$-$$ins$$ structure and $$ins$$-$$tri$$ structure, where $$ad$$ means an oxygen atom on top of Si atom and $$tri$$ means the interstitial oxygen atom, appear after a short time. Our results imply the presence of a mobile O$$_{2}$$ on the surface.



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